252 citations · 286 across the 3 of their papers we have counts for
3 papers
physics.app-ph2024
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Chang Niu, Linjia Long, Yizhi Zhang +6
The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a cruc…
cond-mat.mes-hall2022★ 34 cited
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
cond-mat.mtrl-sci2021★ 252 cited
Intrinsic ferroelectricity in Y-doped HfO2 thin films
Yu Yun, Pratyush Buragohain, Ming Li +10
Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the n…