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cond-mat.mes-hall2013★ 5 cited
Aharonov-Bohm effect and coherence length of charge e/4 quasiparticles at 5/2 filling factor measured in multiple small Fabry-Perot interferometers
R. L. Willett, L. N. Pfeiffer, K. W. West +1
Design of a Fabry-Perot (double point contact) interferometer to measure fractional quantum Hall effect quasiparticle charge properties, and in particular the 5/2 excitations, pose…
cond-mat.mes-hall2012★ 32 cited
20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
J. J. Gu, X. W. Wang, H. Wu +5
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equiva…
cond-mat.mes-hall2012★ 10 cited
III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
J. J. Gu, X. W. Wang, J. Shao +4
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) archite…