most citedInfrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

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cond-mat.str-el2010★ 46 cited

Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

N. P. Armitage, Riccardo Tediosi, F. Levy +3

The application of pressure to elemental bismuth reduces its conduction-valence band overlap, and results in a semimetal-semiconductor (SMSC) transition around 25 kbar. This transi…