Understanding Memristive Behavior: An Atomistic Study of the Influence of Grain Boundaries on Surface and Out-of-Plane Diffusion of Metallic Atoms

Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas +4

Atomic migration from metallic contacts, and subsequent filament formation, is recognised as a prevailing mechanism leading to resistive switching in memristors based on two-dimens…