9 citations · 9 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025★ 9 cited
Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions
Wenkai Zhu, Hui Wen, Shouguo Zhu +14
Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects du…
physics.app-ph2024
Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions
Shouguo Zhu, Hailong Lin, Wenkai Zhu +3
The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that s…