9 citations · 12 across the 4 of their papers we have counts for
5 papers
Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer
Zelalem Abebe Bekele, Kun Lei, Xiukai Lan +8
The spin Hall effect provides a well-established route for electrical magnetization control, while the orbital Hall effect offers a powerful yet less explored source of angular mom…
Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer
Zelalem Abebe Bekele, Kun Lei, Xiukai Lan +7
The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-effic…
Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions
Wenkai Zhu, Hui Wen, Shouguo Zhu +14
Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects du…
Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions
Shouguo Zhu, Hailong Lin, Wenkai Zhu +3
The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that s…
Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques
Weihao Li, Wenkai Zhu, Gaojie Zhang +10
Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic device…