2 citations · 2 across the 2 of their papers we have counts for
4 papers
Enhancing Electrical Properties of Selectively Grown In-Plane InAs Nanowires using InGaAs Buffer and Capping Layers
Pradip Adhikari, Anjali Rathore, Dayrl P Briggs +2
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, a…
Aluminum Scandium Nitride as a Functional Material at 1000°C
Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao +10
Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric proper…
Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing
Shubham Mondal, Md Mehedi Hasan Tanim, Garrett Baucom +9
The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses…
Controlling structural phases of Sn through lattice engineering
Chandima Kasun Edirisinghe, Anjali Rathore, Taegeon Lee +15
Topology and superconductivity, two distinct phenomena offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable ene…