activity
20232025
most citedAluminum Scandium Nitride as a Functional Material at 1000°C

15 citations · 20 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2025

Enhancing Electrical Properties of Selectively Grown In-Plane InAs Nanowires using InGaAs Buffer and Capping Layers

Pradip Adhikari, Anjali Rathore, Dayrl P Briggs +2

In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, a…

cond-mat.mtrl-sci2024★ 15 cited

Aluminum Scandium Nitride as a Functional Material at 1000°C

Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao +10

Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric proper…

cond-mat.mtrl-sci2024★ 2 cited

Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing

Shubham Mondal, Md Mehedi Hasan Tanim, Garrett Baucom +9

The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses…

cond-mat.mtrl-sci2024

Controlling structural phases of Sn through lattice engineering

Chandima Kasun Edirisinghe, Anjali Rathore, Taegeon Lee +15

Topology and superconductivity, two distinct phenomena offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable ene…

cond-mat.mtrl-sci2023★ 3 cited

Structural Anisotropy in Sb Thin Films

Pradip Adhikari, Anuradha Wijesinghe, Anjali Rathore +11

Sb thin films have attracted wide interests due to their tunable band structure, topological phases, and remarkable electronic properties. We successfully grow epitaxial Sb thin fi…