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Minghao Qi

1 paper here

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  • cond-mat.mes-hall1
ORCID 0009-0006-5989-4311

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most citedTop-gated graphene field-effect-transistors formed by decomposition of SiC

222 citations · 222 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2008★ 222 cited

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Y. Q. Wu, P. D. Ye, M. A. Capano +4

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 i…

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