112 citations · 158 across the 6 of their papers we have counts for
6 papers
Photoinduced twist and untwist of moiré superlattices in TMDC heterobilayers
C. J. R. Duncan, A. C. Johnson, I. Maity +15
Two-dimensional moiré materials are formed by artificially stacking atomically thin monolayers. A wealth of correlated and topological quantum phases can be engineered via precise…
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant +6
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks…
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Growth of on by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
J. P. McCandless, D. Rowe, N. Pieczulewski +8
We report the growth of on -plane by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We…
Silicon-doped -GaO films grown at 1 m/h by suboxide molecular-beam epitaxy
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow -GaO at a growth rate of ~1 m/h with control of the silicon doping concentration from 5x10…
Atomically precise interfaces from non-stoichiometric deposition
Yuefeng Nie, Ye Zhu, Che-hui Lee +8
Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent…