2 citations · 2 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2026
Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation
Aaquib Shamim, Scott D. Liles, Joe Hillier +10
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and…
cond-mat.mes-hall2025★ 2 cited
Effect of disorder and strain on the operation of planar Ge hole spin qubits
Abhikbrata Sarkar, Pratik Chowdhury, Xuedong Hu +5
Germanium quantum dots in strained heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretic…