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most citedExtreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with and High On-Current

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cond-mat.mtrl-sci2026

Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures

Pietro Pampili, Vitaly Z. Zubialevich, Badal Mondal +4

In this work, we report on recent results in understanding and addressing the issue of interface smearing in high-aluminium content AlGaN/AlGaN heterostructures. On the one hand, t…