15 citations · 28 across the 4 of their papers we have counts for
4 papers
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…
Machine learning for accelerated bandgap prediction in strain-engineered quaternary III-V semiconductors
Badal Mondal, Julia Westermayr, Ralf Tonner-Zech
Quaternary III-V semiconductors are one of the major promising material classes in optoelectronics. The bandgap and its character, direct or indirect, are the most important fundam…
Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors
Badal Mondal, Marcel Kröner, Thilo Hepp +2
Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials.…
Systematic strain-induced bandgap tuning in binary III-V semiconductors from density functional theory
Badal Mondal, Ralf Tonner-Zech
The modification of the nature and size of bandgaps for III-V semiconductors is of strong interest for optoelectronic applications. Strain can be used to systematically tune the ba…