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Dongwook Kim

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
  • cond-mat.str-el1
ORCID 0000-0002-5687-7739

identity via Semantic Scholar / OpenAlex

most citedPercolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

244 citations · 459 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2008★ 244 cited

Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

S. H. Chang, J. S. Lee, S. C. Chae +5

We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond…

cond-mat.mtrl-sci2008★ 155 cited

Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

S. H. Chang, S. C. Chae, S. B. Lee +8

We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, tBE​, and investigated their resistance switching behaviors. The capacitors with $t_{BE}…

cond-mat.str-el2007★ 60 cited

Surface versus bulk characterization of the electronic inhomogeneity in a VO_{2} film

Y. J. Chang, J. S. Yang, Y. S. Kim +6

We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using t…

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