activity
20222026
most citedTunable Electron Transport in Defect-Engineered PdSe

14 citations · 28 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2026

Temperature-driven enhancement and sign reversal of field-like torque in Py/FePS bilayers

Dhananjaya Mahapatra, Anudeepa Ghosh, Harekrishna Bhunia +2

Electrical manipulation of magnetization via current-induced spin orbit torques offers a promising route toward nonvolatile and energy efficient spintronic devices. In this work, w…

cond-mat.mtrl-sci2025★ 1 cited

Magnetodielectric Properties in Two Dimensional Magnetic Insulators

Koushik Dey, Hasina Khatun, Anudeepa Ghosh +3

Magnetodielectric (MD) materials are important for their ability to spin-charge conversion, magnetic field control of electric polarization and vice versa. Among these, two-dimensi…

cond-mat.mtrl-sci2023

Emergence of a Non-van der Waals Magnetic Phase in a van der Waals Ferromagnet

Bikash Das, Subrata Ghosh, Shamashis Sengupta +12

Manipulation of long-range order in two-dimensional (2D) van der Waals (vdW) magnetic materials (e.g., CrI, CrSiTe etc.), exfoliated in few-atomic layer, can be achieved vi…

cond-mat.mes-hall2023

Pressure induced insulator-to-metal transition in few-layer FePS at 1.5 GPa

Bidyut Mallick, Mainak Palit, Rajkumar Jana +9

In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott tr…

cond-mat.mes-hall2023★ 14 cited

Tunable Electron Transport in Defect-Engineered PdSe

Tanima Kundu, Barnik Pal, Bikash Das +8

Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present t…

cond-mat.mes-hall2022★ 8 cited

Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure Interface Engineering

Sujan Maity, Dibyendu Dey, Anudeepa Ghosh +13

Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin…

cond-mat.mes-hall2022★ 5 cited

Ultrahigh breakdown current density of van der Waals One Dimensional

Bikash Das, Kapildeb Dolui, Rahul Paramanik +5

One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel material in the field-effect transistor (FET) devices and probably, a better intercon…

cond-mat.mes-hall2022

Anisotropic Magnetodielectric Coupling in Layered Antiferromagnetic FePS

Anudeepa Ghosh, Magdalena Birowska, Pradeepta Kumar Ghose +9

We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS (Néel temperature 120K) with perpendic…