1 citations · 1 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2025★ 1 cited
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
quant-ph2025
A trilinear quantum dot architecture for semiconductor spin qubits
R. Li, V. Levajac, C. Godfrin +10
Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles…