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cond-mat.mtrl-sci2025
Amorphous phase-change memory alloy with no resistance drift
Xiaozhe Wang, Ruobing Wang, Suyang Sun +12
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical re…
cond-mat.mtrl-sci2024
Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors
Jieling Tan, Jiang-Jing Wang, Hang-Ming Zhang +6
Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The…