366 citations · 502 across the 5 of their papers we have counts for
5 papers
Pulse Shaping to Mitigate the Impact of Device Imperfections in Field-Free Switching Using Combined Spin-Orbit and Spin-Transfer Torques
Kuldeep Ray, Jérémie Vigier, Sylvain Martin +4
Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a p…
Intrinsic back-switching phenomenon in SOT-MRAM devices
Kuldeep Ray, Jérémie Vigier, Perrine Usé +5
The writing process of SOT-MRAMs is considered deterministic when additional symmetry-breaking factors, such as the application of an external magnetic field aligned with the curre…
Harnessing Orbital Hall Effect in Spin-Orbit Torque MRAM
Rahul Gupta, Chloé Bouard, Fabian Kammerbauer +6
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for…
Chiral damping of magnetic domain walls
Emilie Jué, C. K. Safeer, Marc Drouard +9
Structural symmetry breaking in magnetic materials is responsible for a variety of outstanding physical phenomena. Examples range from the existence of multiferroics, to current in…
Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
Murat Cubukcu, Olivier Boulle, Marc Drouard +7
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magne…