2 citations · 2 across the 4 of their papers we have counts for
4 papers
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
Identifying high-energy electronic states of NV centers in diamond
Minh Tuan Luu, Christopher Linderälv, Zsolt Benedek +4
The negatively charged nitrogen-vacancy center in diamond is a prototype photoluminescent point defect spin qubit with promising quantum technology applications, enabled by its eff…
Near zero-field microwave-free magnetometry with ensembles of nitrogen-vacancy centers in diamond
Omkar Dhungel, Till Lenz, Muhib Omar +8
We study cross-relaxation features near zero magnetic field with ensembles of nitrogen-vacancy (NV) centers in diamond and examine their properties in samples with a range (0.9 ppm…