3 papers
cond-mat.mtrl-sci2026
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
cond-mat.mtrl-sci2026
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
cond-mat.mtrl-sci2025
Identifying high-energy electronic states of NV centers in diamond
Minh Tuan Luu, Christopher Linderälv, Zsolt Benedek +4
The negatively charged nitrogen-vacancy center in diamond is a prototype photoluminescent point defect spin qubit with promising quantum technology applications, enabled by its eff…