3 papers
cond-mat.mtrl-sci2025
Red Emission from Strain-Relaxed Bulk InGaN Active Region
Zuojian Pan, Zhizhong Chen, Haodong Zhang +7
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs…
physics.app-ph2024
Frequency-Resolved Forward Capacitance in GaN-based LEDs
Yuchen Li, Zhizhong Chen, Chuhan Deng +12
This study establishes a unified framework for interpreting dynamic capacitive responses in InGaN-based light-emitting diodes (LEDs) through forward-bias capacitance-voltage-freque…
cond-mat.mtrl-sci2023
Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates
Zuojian Pan, Zhizhong Chen, Yiyong Chen +15
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped…