14 citations · 23 across the 4 of their papers we have counts for
4 papers
Red Emission from Strain-Relaxed Bulk InGaN Active Region
Zuojian Pan, Zhizhong Chen, Haodong Zhang +7
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs…
Frequency-Resolved Forward Capacitance in GaN-based LEDs
Yuchen Li, Zhizhong Chen, Chuhan Deng +12
This study establishes a unified framework for interpreting dynamic capacitive responses in InGaN-based light-emitting diodes (LEDs) through forward-bias capacitance-voltage-freque…
Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates
Zuojian Pan, Zhizhong Chen, Yiyong Chen +15
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped…
Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects
Z. Pan, Z. Chen, H. Zhang +16
Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the…