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cond-mat.mtrl-sci2025★ 4 cited
Red Emission from Strain-Relaxed Bulk InGaN Active Region
Zuojian Pan, Zhizhong Chen, Haodong Zhang +7
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs…
cond-mat.mtrl-sci2023
Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates
Zuojian Pan, Zhizhong Chen, Yiyong Chen +15
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped…
cond-mat.mtrl-sci2023
Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects
Z. Pan, Z. Chen, H. Zhang +16
Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the…