Lutz Baumgarten

activity

20232025

collaborators

3 papers

cond-mat.mtrl-sci2025

Ferroelectricity of Wurtzite Al $_{1 - x}$ Hf $_{x}$ N Heterovalent Alloys

Nate S. P. Bernstein, Daniel Drury, Cheng-Wei Lee +11

Thin films of aluminum hafnium nitride (Al $_{1 - x}$ Hf $_{x}$ N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single…

cond-mat.mtrl-sci2024

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Oliver Rehm, Lutz Baumgarten, Roberto Guido +6

Aluminum scandium nitride (Al $_{1 - x}$ Sc $_{x}$ N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…

cond-mat.mtrl-sci2023

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO $_{3}$ Interfaces

Pia M. Düring, Paul Rosenberger, Lutz Baumgarten +4

Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of sem…

Ferroelectricity of Wurtzite Al1−x​Hfx​N Heterovalent Alloys

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO3​ Interfaces

Ferroelectricity of Wurtzite Al $_{1 - x}$ Hf $_{x}$ N Heterovalent Alloys

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO $_{3}$ Interfaces