5 citations · 5 across the 6 of their papers we have counts for
6 papers
Melting behavior and dynamical properties of Cr2Ge2Te6 phase-change material
Suyang Sun, Yihui Jiang, Riccardo Mazzarello +1
Cr2Ge2Te6 (CrGT) is known as an intrinsic ferromagnetic semiconductor and a promising candidate for phase-change memory applications. In amorphous CrGT, Cr atoms form non-defective…
Spin glass behavior in amorphous CrSiTe3 alloy
Xiaozhe Wang, Jiayue Wang, Yihui Jiang +4
Owing to the intrinsically high crystallization temperatures, layered phase-change materials, such as CrGeTe3 and InGeTe3, are attracting attention for embedded memory applications…
Amorphous phase-change memory alloy with no resistance drift
Xiaozhe Wang, Ruobing Wang, Suyang Sun +12
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical re…
Ab initio investigation of layered TMGeTe3 alloys for phase-change applications
Yihui Jiang, Suyang Sun, Hanyi Zhang +4
Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to i…
Spin glass behavior in amorphous Cr2Ge2Te6 phase-change alloy
Xiaozhe Wang, Suyang Sun, Jiang-Jing Wang +8
The layered crystal structure of Cr2Ge2Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pul…
Density dependent local structures in InTe phase-change materials
Suyang Sun, Bo Zhang, Xudong Wang +1
Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) is one of the leading candidates for the development of non-volatile memory and neuro-inspired computi…