5 papers
Spin glass behavior in amorphous CrSiTe3 alloy
Xiaozhe Wang, Jiayue Wang, Yihui Jiang +4
Owing to the intrinsically high crystallization temperatures, layered phase-change materials, such as CrGeTe3 and InGeTe3, are attracting attention for embedded memory applications…
Amorphous phase-change memory alloy with no resistance drift
Xiaozhe Wang, Ruobing Wang, Suyang Sun +12
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical re…
Role of seed layer in growing atomically flat TiTe2/Sb2Te3 heterostructure thin films at the wafer scale
Chao Nie, Xueyang Shen, Junying Zhang +8
Chalcogenide phase-change materials (PCMs) are a leading candidate for advanced memory and computing applications. Epitaxial-like growth of chalcogenide thin films at the wafer sca…
Ab initio investigation of layered TMGeTe3 alloys for phase-change applications
Yihui Jiang, Suyang Sun, Hanyi Zhang +4
Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to i…
Spin glass behavior in amorphous Cr2Ge2Te6 phase-change alloy
Xiaozhe Wang, Suyang Sun, Jiang-Jing Wang +8
The layered crystal structure of Cr2Ge2Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pul…