40 citations · 56 across the 3 of their papers we have counts for
4 papers
Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors
Fengrui Yao, Menghan Liao, Marco Gibertini +7
Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bul…
Spin valve effect in junctions with a single ferromagnet
Fengrui Yao, Volodymyr Multian, Kenji Watanabe +3
Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magn…
Moire magnetism in CrBr3 multilayers emerging from differential strain
Fengrui Yao, Dario Rossi, Ivo A. Gabrovski +8
Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twist…
Positive oscillating magnetoresistance in a van der Waals antiferromagnetic semiconductor
Xiaohanwen Lin, Fan WU, Nicolas Ubrig +4
In all van der Waals layered antiferromagnetic semiconductors investigated so far a negative magnetoresistance has been observed in vertical transport measurements, with characteri…