1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2015★ 1 cited
Changing the lattice position of a bistable single magnetic dopant in a semiconductor using a scanning tunneling microscope
J. M. Moore, V. R. Kortan, M. E. Flatté +2
We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias vo…
cond-mat.mes-hall2012
Valence state manipulation of single Fe impurities in GaAs by STM
J. Bocquel, V. R. Kortan, R. P. Campion +3
The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend…