activity
20232026
most citedAl0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C

22 citations · 25 across the 6 of their papers we have counts for

collaborators

6 papers

quant-ph2026

Towards a monolithic platform for coupling superconducting circuits to low-loss microwave phonons in AlScN on 4H-SiC

Yuanchen Deng, William W. Roberts, Sueli Skinner-Ramos +12

Hybrid superconducting-phonon quantum processing is promising for cavity QED, measurement-based quantum computing, and other quantum applications. Relative to microwave photons at…

cond-mat.mes-hall2025★ 2 cited

Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13

Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…

cond-mat.mtrl-sci2024★ 22 cited

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C

Yunfei He, David C. Moore, Yubo Wang +9

Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…

physics.app-ph2023

Near 6 GHz Sezawa Mode Surface Acoustic Wave Resonators using AlScN on SiC

Xingyu Du, Nishant Sharma, Zichen Tang +3

Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal re…

physics.app-ph2023★ 1 cited

S-band acoustoelectric amplifier utilizing an ultra-high thermal conductivity heterostructure for low self-heating

Lisa Hackett, Xingyu Du, Michael Miller +9

Here we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin AlScN film grown directly on a 4H-SiC substrate with an…

physics.app-ph2023

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 C

Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 C are currently non-existent and remains a critically unmet challenge in the development o…