3 citations · 3 across the 5 of their papers we have counts for
6 papers
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton +3
Tantalum carbide (TaC) thin film ''virtual'' substrates are a highly desirable material for vertical power electronics devices due to latti…
Revealing epitaxial relationships at GaO interfaces with p-type oxides
Anna Sacchi, Krishna Acharya, Michelle A. Smeaton +5
p-type oxide contact layers such as CrO and NiO are attracting increasing interest in pn-heterojunctions with n-type monoclinic -GaO for high-power electronic de…
Low resistance NiO/β-Ga_{2}O_{3} heterojunction diodes grown via molecular beam epitaxy
Dagny Sacksteder, Anna Sacchi, Renae Gannon +4
NiO is one of the most important p-type oxide contact materials used in many semiconductor technologies. However, current NiO growth methods can induce interfacial damage that dimi…
High-Temperature Hydrogen Sensors Based on Gallium Oxide Heterojunction Diodes
William A. Callahan, Kingsley Egbo, Anna Sacchi +5
Long-term, high temperature operation of Ga2O3 devices is a crucial hurdle that must be overcome before widespread adoption of the technology can be achieved, but is largely absent…
Revealing the Atomic Structure of NiO/GaO Interfaces
Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5
NiO/GaO heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of GaO an…
Quantitative approaches for multi-scale structural analysis with atomic resolution electron microscopy
Noah Schnitzer, Lopa Bhatt, Ismail El Baggari +4
Atomic-resolution imaging with scanning transmission electron microscopy is a powerful tool for characterizing the nanoscale structure of materials, in particular features such as…