6 citations · 6 across the 4 of their papers we have counts for
4 papers · 1 filter
Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
Jiří Kroll, Pavla Federičová, Jan Chochol +15
4H-SiC is a wide-bandgap semiconductor with high displacement threshold energy, large critical electric field, and low intrinsic carrier concentration, making it attractive for rad…
Development of Segmented 4H-SiC LGADs
Vojtěch Kráčmar, Jan Chochol, Adam Klimsza +11
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle d…
Exploring the Design and Measurements of Next-Generation 4H-SiC LGADs
Peter Švihra, Jan Chochol, Vladimír Kafka +13
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics s…
First generation 4H-SiC LGAD production and its performance evaluation
Radek Novotný, Jan Chochol, Vladimír Kafka +11
This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary o…