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cond-mat.mtrl-sci2026

Origin and Reduction of Coercive Fields in ZnO-based Wurtzite Ferroelectrics

Abhijeet Dhakane, Alireza Sepehrinezhad, William Prudnick +5

Wurtzite ferroelectrics offer a route to semiconductor-compatible non-volatile devices, but their large coercive fields (E) constrain the operating window between polarization…

cond-mat.mtrl-sci2026

Absence of lateral domain wall mobility in Zn1-xMgxO thin films

Jack Eckstein, Kyle P. Kelley, William Prudnick +4

Polarization reversal in ferroelectrics arises from the coupled processes of domain nucleation and subsequent growth, yet the governing mechanisms differ fundamentally between clas…

cond-mat.mtrl-sci2026

An Automated Magnetron Sputtering Chamber for Ferroelectric Thin Film Deposition

Stanislav A. Udovenko, Ian Mercer, Sarah Olandt +5

Optimization of next-generation materials synthesis and manufacturing processes can be accelerated by effective use of digital datasets. However, a majority of existing custom rese…

cond-mat.mtrl-sci2025

Ferroelectric AlBN sputtered thin films on n-type Si bottom electrodes

Ian Mercer, Chloe Skidmore, Sebastian Calderon +2

Ferroelectric AlBN thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = <0.01, 0.02, 0.06, 0.08, 0.13, and 0…

cond-mat.mtrl-sci2025

Processing-dependent Chemical Ordering in a Metallic Alloy Characterized via Non-destructive Bragg Coherent Diffraction Imaging

Nathaniel Warren, Chloe Skidmore, Katherine J. Harmon +4

Of current importance for alloy design is controlling chemical ordering through processing routes to optimize an alloy's mechanical properties for a desired application. However, c…