25 citations · 41 across the 6 of their papers we have counts for
6 papers
Beyond HBM-on-GPU: Thermal Design Envelope for 3D Volumetric DRAM-on-GPU Integration
Yukai Chen, Melina Lofrano, Khakim Akhunov +12
The scaling of GPUs for AI and HPC workloads is increasingly constrained by the capacity, bandwidth, and thermal limits of both 2.5D HBM-GPU and direct-stacked 3D HBM-on-GPU integr…
Characterization of NbTiN/HZO/NbTiN MIM Capacitors for high frequency AC Clock & Power Distribution Network for Superconducting Digital Circuits
Seifallah Ibrahim, Blake Hodges, Steven Brebels +14
A resonant clock-power distribution network is critical for scaling energy efficient superconducting digital technology to practical high integration density circuits. High-k, tuna…
Selecting Alternative Metals for Advanced Interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, Benoit Van Troeye +14
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect s…
Properties of Nb\_xTi\_{(1-x)}N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits
Daniel Pérez Lozano, Jean-Philippe Soulié, Blake Hodges +7
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of…
AlSc thin films for advanced interconnect applications
Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta +7
AlSc thin films have been studied with compositions around AlSc ( = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films w…
Resistivity scaling and electron relaxation times in metallic nanowires
Kristof Moors, Bart Sorée, Zsolt Tőkei +1
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled inte…