1 citations · 1 across the 5 of their papers we have counts for
5 papers
Manipulating magnetization by orbital current from a light metal Ti
Dongxing Zheng, Jingkai Xu, Fatimah Alsayafi +16
The orbital Hall effect, which does not rely on the spin-orbit coupling, has recently emerged as a promising mechanism for electrically manipulating magnetization in thin-film ferr…
Orbital Current-Driven Magnetization Switching in a Magnetic Tunnel Junction
Jingkai Xu, Dongxing Zheng, Meng Tang +9
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the…
Topological spin-torque diode effect in skyrmion-based magnetic tunnel junctions
Bin Fang, Riccardo Tomasello, Yuxuan Wu +10
The growing market and massive use of Internet of Things nodes is placing unprecedented demands of energy efficient hardware for edge computing and microwave devices. In particular…
A noise-tolerant, resource-saving probabilistic binary neural network implemented by the SOT-MRAM compute-in-memory system
Yu Gu, Puyang Huang, Tianhao Chen +5
We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant compu…
Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
Puyang Huang, Aitian Chen, Jianting Dong +9
Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative t…