2 papers
cond-mat.other2026
Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions
Balram Khattar, Adarsh Tripathi, Manish Anand +1
HfO-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance rati…
cond-mat.mes-hall2025
Asymmetric Resonant Ferroelectric Tunnel Junctions for Simultaneous High Tunnel Electroresistance and Low Resistance-Area Product
Balram Khattar, Adarsh Tripathi, Manmohan Brahma +1
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area p…