Showing physics.app-phShow all
2 papers · 1 filter
physics.app-ph2025
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…
physics.app-ph2023
Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 C
Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 C are currently non-existent and remains a critically unmet challenge in the development o…