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cond-mat.mes-hall2024
On the origin of filamentary resistive switching in oxides-based memristive devices
R. Leal Martir, E. A. Jagla, D. Rubi +1
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. Howev…
cond-mat.mes-hall2024
Oxygen vacancies kinetics in / memristive interfaces
C. Ferreyra, R. Leal Martir, D. Rubi +1
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combina…
physics.app-ph2024
Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO-based devices
C. Ferreyra, M. Badillo, M. J. Sánchez +3
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization…