Sarker Md. Sadman

collaborators

4 papers

cond-mat.mtrl-sci2026

Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films

Dong Su Yu, Shashu Tomar, Zixiu Huang +7

LiGa5O8 is an ultrawide-bandgap oxide semiconductor that has recently been experimentally demonstrated to exhibit p-type conductivity; however, the origin of the observed p-type tr…

cond-mat.mtrl-sci2026

First-principles study of infrared, Raman, piezoelectric and elastic properties of Mg-IV-N\textsubscript{2} (IV = Ge, Si, Sn)

Sarker Md. Sadman, Walter R. L. Lambrecht

Mg-IV-N\textsubscript{2} compounds with IV=Si, Ge, Sn are ultra-wide band gap semiconductors with various potential electronic and optoelectronic applications. They share the \text…

cond-mat.mtrl-sci2026

Electronic band structure and exciton properties of $P na 2_{1}$ CaSnN $_{2}$

Ilteris K. Turan, Sarker Md. Sadman, Walter R. L. Lambrecht

The electronic band structure of CaSnN $_{2}$ in the wurtzite-based $P na 2_{1}$ structure is calculated using the Quasiparticle Self-consistent (QS)GW $^{B S E}$ method, including ladder di…

cond-mat.mtrl-sci2025

Phonon, Infrared and Raman Spectra of LiGa5O8 from Density Functional Perturbation Theory

Sarker Md. Sadman, Walter R. L. Lambrecht

LiGa $_{5}$ O $_{8}$ with a cubic spinel type structure was recently reported to be a ultra-wide-band-gap semiconductor with unintentional p-type conduction. While the origin of p-type do…

Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films

First-principles study of infrared, Raman, piezoelectric and elastic properties of Mg-IV-N\textsubscript{2} (IV = Ge, Si, Sn)

Electronic band structure and exciton properties of Pna21​ CaSnN2​

Phonon, Infrared and Raman Spectra of LiGa5O8 from Density Functional Perturbation Theory

Electronic band structure and exciton properties of $P na 2_{1}$ CaSnN $_{2}$