activity
20222025
most citedIntegration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon

2 citations · 2 across the 3 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci20252 cited

Integration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon

Jingtian Zhao, Beatriz Noheda, Martin F. Sarott

Highly-crystalline ferroelectric oxides integrated on Si hold great promise for energy-efficient memory and logic technologies. Exploiting epitaxial strain engineering in these mat…

cond-mat.mtrl-sci2025

Polarity and anti-distortive polarons in WO3 through epitaxial shear strain

Ewout van der Veer, Martin F. Sarott, Jack T. Eckstein +11

Bestowing CMOS-compatible binary oxides with additional functionalities is a powerful strategy toward the realization of oxide electronics. Ideal candidates are thin films which di…

cond-mat.mtrl-sci2023

Improving the crystallinity and texture of oblique-angle-deposited AlN thin films using reactive synchronized HiPIMS

Jyotish Patidar, Amit Sharma, Siarhei Zhuk +7

Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-a…

cond-mat.mtrl-sci2023

Surface-Sensitive Raman Scattering by Transferable Nanoporous Plasmonic Membranes

Roman M. Wyss, Günter Kewes, Martin Frimmer +11

Raman spectroscopy is a powerful technique to characterize materials. It probes non-destructively chemical composition, crystallinity, defects, strain and coupling phenomena. Howev…

cond-mat.mtrl-sci2022

Defeating depolarizing fields with artificial flux closure in ultrathin ferroelectrics

Elzbieta Gradauskaite, Quintin N. Meier, Natascha Gray +6

Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in the so-called dead layers. It is notably problematic…

cond-mat.mes-hall2022

Imaging ferroelectric domains with a single-spin scanning quantum sensor

William S. Huxter, Martin F. Sarott, Morgan Trassin +1

The ability to sensitively image electric fields is important for understanding many nanoelectronic phenomena, including charge accumulation at surfaces and interfaces and field di…