2 papers
cond-mat.mtrl-sci2026
What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?
Francesco Lodola, Zhuangyi Zhou, Boaz Koren +10
Among the highly efficient photovoltaic technologies, that do not rely on epitaxy, only chalcopyrites have a bandgap tunable down to 1.00 eV, the ideal for tandem applications. Thi…
cond-mat.mtrl-sci2025
Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer
Taowen Wang, Longfei Song, Saeed Bayat +6
Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)…