1 citations · 1 across the 2 of their papers we have counts for
2 papers
physics.app-ph2025★ 1 cited
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…
cond-mat.mtrl-sci2024
Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys
Shang Liu, Yunfan Liang, Nirosh M. Eldose +18
Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful…