9 citations · 22 across the 9 of their papers we have counts for
9 papers
Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia
Jian Huang, Gwan Yeong Jung, Pravan Omprakash +6
Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the po…
Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface
Xin Li, Yu Yun, Guodong Ren +4
The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfac…
Antiferroelectricity with metastable polar state from Kittel model
Amit Kumar Shah, Xin Li, Guodong Ren +3
We have revisited the Kittel model that describes antiferroelectricity (AFE) in terms of two sublattices of spontaneous polarization with antiparallel couplings. By constructing th…
Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO
Guodong Ren, Pravan Omprakash, Xin Li +4
The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarizati…
Recent Progress on Multiferroic Hexagonal Rare-Earth Ferrites (h-RFeO3, R = Y,Dy-Lu)
Xin Li, Yu Yun, Xiaoshan Xu
Multiferroic hexagonal rare-earth ferrites (h-RFeO3, R=Sc, Y, and rare earth), in which the improper ferroelectricity and canted antiferromagnetism coexist, have been advocated as…
Improper flexoelectricity in hexagonal rare-earth ferrites
Xin Li, Guodong Ren, Yu Yun +5
Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale…
Antiferroelectric Hafnia Down to the 2D Limit
Xin Li, Guodong Ren, Haidong Lu +16
Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for ene…
Giant interfacial spin-Hall angle from Rashba-Edelstein effect revealed by the spin-Hall Hanle processes
Jing Li, Andrew H. Comstock, Aeron McConnell +2
The Rashba-Edelstein effect (REE), which generates interfacial spin polarization and subsequent spin current, is a compelling spin-charge conversion mechanism for spintronics appli…
Dual mechanisms for transient capacitance anomaly in improper ferroelectrics
Xin Li, Yu Yun, Pratyush Buragohain +6
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this wor…