1 citations · 1 across the 2 of their papers we have counts for
2 papers
physics.app-ph2026★ 1 cited
20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories
Alexandre Baigol, Ruben Hamming-Green, Paul Uriarte Vicandi +8
Achieving low-voltage, nanosecond multi-level programming and non-destructive read-out of ferroelectric non-volatile memories (NVM) is critical for analog in-memory computing archi…
cond-mat.mtrl-sci2025
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering
Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone +6
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltag…