2 papers
cond-mat.mtrl-sci2025
Scalable thru-hole epitaxy of GaN through self-adjusting -BN masks via solution-processed 2D stacks
Jongwoo Ha, Minah Choi, Jieun Yang +1
Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and in…
cond-mat.mtrl-sci2024
Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4
Ji-Eun Lee, Aifeng Wang, Shuzhang Chen +13
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for…