2 papers
cond-mat.mtrl-sci2025
Scalable thru-hole epitaxy of GaN through self-adjusting -BN masks via solution-processed 2D stacks
Jongwoo Ha, Minah Choi, Jieun Yang +1
Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and in…
cond-mat.mtrl-sci2025
TBA-enabled spin-coating of a percolatively connected GO nanosieve for thru-hole epitaxy: tuning GO flake stacking and coverage to control GaN nucleation
Gunhoon Beak, Changwook Dong, Minah Choi +3
We report a spin-coating-based approach for forming a percolatively connected graphene oxide (GO) nanosieve on SiO-patterned sapphire substrates, where the addition of tetrabut…