4 citations · 4 across the 3 of their papers we have counts for
4 papers
Self-organized defect clustering and concentration-dependent vacancy diffusion in MoS
Aaron Flötotto, Benjamin Spetzler, Martin Ziegler +2
Sulfur vacancy migration has a crucial impact on electronic transport and the functional behavior of MoS-based devices such as memristors and memtransistors. According to recen…
Large-scale cooperative sulfur vacancy dynamics in two-dimensional MoS2 from machine learning interatomic potentials
Aaron Flötotto, Benjamin Spetzler, Rose von Stackelberg +3
The formation of extended sulfur vacancies in MoS2 monolayers is closely associated with catalytic activity and may also be the basis for its memristive behavior. Nanosecond-scale…
Physics-Guided Sequence Modeling for Fast Simulation and Design Exploration of 2D Memristive Devices
Benjamin Spetzler, Elizaveta Spetzler, Saba Zamankhani +4
Modeling hysteretic switching dynamics in memristive devices is computationally demanding due to coupled ionic and electronic transport processes. This challenge is particularly re…
Numerical analysis and simulation of lateral memristive devices: Schottky, ohmic, and multi-dimensional electrode models
Dilara Abdel, Maxime Herda, Martin Ziegler +3
In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D)…