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Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures
Fateme Mahdikhanysarvejahany, Daniel N. Meade, Christine Muccianti +12
MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several…
Interferences of electrostatic moiré potentials and bichromatic superlattices of electrons and excitons in transition metal dichalcogenides
Qingjun Tong, Mingxing Chen, Feiping Xiao +2
Recent experimental progresses have demonstrated the great potential of electronic and excitonic moiré superlattices in transition metal dichalcogenides (TMDs) for quantum many-bod…
Monolayer Semiconductor Auger Detector
Colin M. Chow, Hongyi Yu, John R. Schaibley +9
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiat…
Non-adiabatic Hall effect at Berry curvature hot spot
Matisse Wei-Yuan Tu, Ci Li, Hongyi Yu +1
Hot spot of Berry curvature is usually found at Bloch band anti-crossings, where the Hall effect due to the Berry phase can be most pronounced. With small gaps there, the adiabatic…
Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
Minhao He, Pasqual Rivera, Dinh Van Tuan +10
The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dich…