187 citations · 274 across the 4 of their papers we have counts for
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Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Alban Gassenq, Kevin Guilloy, Nicolas Pauc +7
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge c…
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
A. Gassenq, L. Milord, J. Aubin +8
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…
Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport
Matthieu Jamet, Ing-Song Yu, Thibaut Devillers +6
Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the…