170 citations · 372 across the 20 of their papers we have counts for
Showing 2018 · cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2018
Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces
Zheng Hui Lim, Nicholas F. Quackenbush, Aubrey Penn +10
Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors an…
cond-mat.mtrl-sci2018★ 22 cited
Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface
Y. Du, P. V. Sushko, S. R. Spurgeon +6
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have…
cond-mat.mtrl-sci2018
HAXPES for materials science at the GALAXIES beamline
J. -P. Rueff, J. E. Rault, J. M. Ablett +2
In this article, we will discuss the recent developments of HAXPES at the GALAXIES beamline at the SOLEIL synchrotron for the study of advanced materials.