22 citations · 26 across the 5 of their papers we have counts for
5 papers
Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays
Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan +12
We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizi…
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…
Materials for High Temperature Digital Electronics
Dhiren K. Pradhan, David C. Moore, A. Matt Francis +5
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio…
Accurate Crystal Structure Prediction of New 2D Hybrid Organic Inorganic Perovskites
Nima Karimitari, William J. Baldwin, Evan W. Muller +4
Low dimensional hybrid organic-inorganic perovskites (HOIPs) represent a promising class of electronically active materials for both light absorption and emission. The design space…
Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 C
Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 C are currently non-existent and remains a critically unmet challenge in the development o…