most citedDemonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

2 citations · 3 across the 6 of their papers we have counts for

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cond-mat.mtrl-sci2026

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN

Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12

Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…

cond-mat.mtrl-sci2025

Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN

Hyunmin Cho, Yubo Wang, Chloe Leblanc +5

Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…