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physics.optics2024
Black GeSn on Silicon for Enhanced Short-Wave Infrared Detection and Imaging
Po-Rei Huang, Yue-Tong Jheng, Guo-En Chang
Sensitive and cost-effective Group-IV short-wave infrared (SWIR) photodetectors (PDs), compatible with complementary metal-oxide semiconductor (CMOS) processes, are crucial for var…
physics.optics2024
Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
Sudip Acharya, Hryhorii Stanchu, Rajesh Kumar +6
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. D…